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Volumn 217, Issue 2, 2004, Pages 321-326

Effect of <200 keV proton radiation on electric properties of silicon solar cells at 77 K

Author keywords

Electric properties; Proton irradiation; Radiation induced defects; Silicon solar cells

Indexed keywords

DEGRADATION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ORBITS; PROTON IRRADIATION; RADIATION DAMAGE; SHORT CIRCUIT CURRENTS; SPACECRAFT;

EID: 1342329643     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.10.008     Document Type: Article
Times cited : (12)

References (16)
  • 13
    • 0021642853 scopus 로고
    • Radiation damage and defect behavior in ion-implanted lithium counterdoped silicon solar cells
    • IEEE, Hyatt-Orlando Hotel Kissimmee, Florida
    • I. Weinberg, S. Mehta, C.K. Swartz, Radiation damage and defect behavior in ion-implanted lithium counterdoped silicon solar cells, Seventeenth IEEE photovoltaic specialists conference, IEEE, Hyatt-Orlando Hotel Kissimmee, Florida, 1984, p. 1088.
    • (1984) Seventeenth IEEE Photovoltaic Specialists Conference , pp. 1088
    • Weinberg, I.1    Mehta, S.2    Swartz, C.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.