High-density InGaN nanodots grown on pretreated GaN surfaces

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Chen, P ^a   Chua, S J ^a   Tan, J N ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICA; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; THIN FILMS;

CONTROLLABLE INGAN NANODOTS; DIMENSIONAL MODE; FORMATION MECHANISM; WAVELENGTH;

INDIUM COMPOUNDS;

EID: 33746034575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218312     Document Type: Article

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