Angle resolved IBIC analysis of 4H-SiC Schottky diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 213-216

  Giudice, A Lo ^a   Garino, Y ^a,b   Manfredotti, C ^a,b   Rigato, V ^c   Vittone, E ^a,b  

^a UNIVERSITY OF TURIN   (Italy)

^b SEZIONE DI TORINO   (Italy)

^c LABORATORI NAZIONALI DI LEGNARO   (Italy)

Author keywords

Dead layer; IBIC Ion beam induced charge collection; Silicon carbide Schottky diode

Indexed keywords

ANGLE MEASUREMENT; DIFFUSION; FUNCTION EVALUATION; ION BEAMS; MATHEMATICAL MODELS; SILICON CARBIDE; THEOREM PROVING;

DEAD LAYER; IBIC - ION BEAM INDUCED CHARGE COLLECTION; SILICON CARBIDE SCHOTTKY DIODE;

SCHOTTKY BARRIER DIODES;

EID: 33745966075     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.168     Document Type: Article

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