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Volumn 35, Issue 6, 1999, Pages 1458-1462
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High-temperature operation of SiC planar ACCUFET
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Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
COMPUTER SIMULATION;
ELECTRIC RESISTANCE;
GATES (TRANSISTOR);
SILICON CARBIDE;
THERMAL EFFECTS;
LOGIC LEVEL GATES;
VOLTAGE DROP;
MOSFET DEVICES;
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EID: 0033361467
PISSN: 00939994
EISSN: None
Source Type: Journal
DOI: 10.1109/28.806062 Document Type: Article |
Times cited : (13)
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References (9)
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