Ferroelectric charge transfer device using polarization-assisted tunneling for single transistor nonvolatile memories

Integrated Ferroelectrics

Volumn 81, Issue 1, 2006, Pages 187-196

  Dalton, D ^a   Gnadinger, F ^a   Klingensmith, D ^a   Olariu, V ^a   Kalkur, T ^b   Rahman, M ^b   Mahmud, A ^b  

^a Cova Technologies ^*  (United States)

^b University of Colorado Colorado Springs   (United States)

Author keywords

Ferroelectrics; Nonvolatile memory; Transistor

Indexed keywords

FERROELECTRIC POLARIZATION; HIGH-K BUFFER LAYER; NONVOLATILE MEMORY; SURFACE CHARGE;

CHARGE TRANSFER; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FERROELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; POLARIZATION;

NONVOLATILE STORAGE;

EID: 33745842597     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600660454     Document Type: Article

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