Combined RBS and TEM characterization of nano-SiGe layers embedded in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 451-453

  Kling, A ^a,b   Ortiz, M I ^c   Sangrador, J ^c   Rodriguez A ^c   Rodriguez T ^c   Ballesteros, C ^d   Soares, J C ^b  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

Chemical vapour deposition; Rutherford backscattering spectrometry; SiGe nanoparticles; Transmission electron microscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

GRAZING INCIDENCE; PARTICLE AREA DENSITIES; SIGE NANOPARTICLES; SIGEO LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33745841350     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.029     Document Type: Article

References (5)

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