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Volumn 6156, Issue , 2006, Pages

Reticle enhancement verification for the 65nm and 45nm nodes

Author keywords

Lithography; OPC; RET; Verification

Indexed keywords

OPTICAL RESOLVING POWER; OPTICAL VARIABLES CONTROL; PHOTOLITHOGRAPHY; PRODUCT DESIGN;

EID: 33745785042     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.658823     Document Type: Conference Paper
Times cited : (11)

References (9)
  • 1
    • 33745777116 scopus 로고    scopus 로고
    • Verification requirements for 45nm and 65nm OPC
    • Olivier Toublan, et. al. Verification requirements for 45nm and 65nm OPC. Proc. of Fuji Film Interface, 2005.
    • (2005) Proc. of Fuji Film Interface
    • Toublan, O.1
  • 2
    • 24644496136 scopus 로고    scopus 로고
    • Full-chip lithography simulation and design analysis: How OPC is changing IC design
    • Chris Spence. Full-chip lithography simulation and design analysis: how OPC is changing IC design. Proc. of SPIE, Vol. 5751, 2005.
    • (2005) Proc. of SPIE , vol.5751
    • Spence, C.1
  • 3
    • 1642555637 scopus 로고    scopus 로고
    • Identifying process window marginalities of reticle designs for 0.15/0.13-um technologies
    • Shih Chieh Lo, et. al. Identifying process window marginalities of reticle designs for 0.15/0.13-um technologies, Proc. of SPIE, Vol. 5130, 2003.
    • (2003) Proc. of SPIE , vol.5130
    • Lo, S.C.1
  • 4
    • 0034538628 scopus 로고    scopus 로고
    • Subresolution process windows and yield estimation technique based on detailed full-chip CD simulation
    • Yuri Granik, et. al. Subresolution process windows and yield estimation technique based on detailed full-chip CD simulation, Proc. of SPIE, Vol. 4182, 2002.
    • (2002) Proc. of SPIE , vol.4182
    • Granik, Y.1
  • 5
    • 0035758432 scopus 로고    scopus 로고
    • Fully automatic side lobe detection and correction technique for attenuated phase-shift masks
    • Olivier Toublan, et. al. Fully automatic side lobe detection and correction technique for attenuated phase-shift masks, Proc. of SPIE, Vol. 4346, 2001.
    • (2001) Proc. of SPIE , vol.4346
    • Toublan, O.1
  • 6
    • 3843101424 scopus 로고    scopus 로고
    • Critical failure ORC: Application to the 90-nm and 65-nm nodes
    • Jerome Belledent, et. al. Critical failure ORC: application to the 90-nm and 65-nm nodes. Proc. of SPIE, Vol. 5377, 2004.
    • (2004) Proc. of SPIE , vol.5377
    • Belledent, J.1
  • 8
    • 19844362131 scopus 로고    scopus 로고
    • Enhanced model-based OPC for 65 nm and below
    • James Word, Nicolas B. Cobb. Enhanced model-based OPC for 65 nm and below, Proc. of SPIE, Vol. 5567, 2004.
    • (2004) Proc. of SPIE , vol.5567
    • Word, J.1    Cobb, N.B.2
  • 9
    • 25144441682 scopus 로고    scopus 로고
    • Improving model-based OPC performance for the 65-nm node through calibration structure set optimization
    • Kyle Patterson, et. al. Improving model-based OPC performance for the 65-nm node through calibration structure set optimization. Proc. of SPIE Vol. 5756, 2005.
    • (2005) Proc. of SPIE , vol.5756
    • Patterson, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.