Enhanced model based OPC for 65nm and below

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 1305-1314

  Word, James ^a   Cobb, Nicolas B ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Fragmentation; Model Based; OPC; Optical Proximity Correction; Rules Based

Indexed keywords

FRAGMENTATION; MODEL BASED OPC; OPTICAL PROXIMITY CORRECTION (OPC); RULES BASED;

COMPUTER SIMULATION; ERROR ANALYSIS; IMAGE ANALYSIS; KNOWLEDGE BASED SYSTEMS; MASKS; MATHEMATICAL MODELS; OPTICAL DESIGN; OPTIMIZATION; PHOTOLITHOGRAPHY;

OPTICAL VARIABLES MEASUREMENT;

EID: 19844362131     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568757     Document Type: Conference Paper

References (4)

1. C.M. Lai et. al., "Phenomena and OPC Solution of Ripple Patterns for 65nm Node", SPIE 5377, pp. 1165-1171, 2004.
2. K. Lucas et. al., "Model-base design improvements for the 100m lithography generation", SPIE 4691, pp. 215 - 226, 2003
3. N. Cobb, A. Zakhor, "A mathematical and CAD framework for proximity correction", SPIE, 2726, 208-222, 1996.
4. Y. Granik, N. Cobb, T. Do, "Universal Process Modeling with VTRE for OPC", SPIE, 4691, pp. 377-394, 2002.