Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN

Physica Status Solidi (B) Basic Research

Volumn 243, Issue 7, 2006, Pages 1594-1598

  Darakchieva, V ^a   Paskova, T ^a,b   Paskov, P P ^a   Arwin, H ^a   Schubert, M ^c   Monemar, B ^a   Figge, S ^b   Homme, D ^b   Haskell, B A ^d   Fini, P T ^d   Nakamura, S ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; PHONONS; SPECTROSCOPIC ELLIPSOMETRY;

A-PLANE GAN; DEFORMATION POTENTIAL; INFRARED SPECTROSCOPIC ELLIPSOMETRY; PHONON MODE; STRAIN-FREE; VIBRATIONAL PROPERTIES;

GALLIUM NITRIDE;

EID: 33745739442     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200565400     Document Type: Conference Paper

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