Application of the 1-D silicon limit to varactors

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1601-1607

  Van Noort, Wibo D ^a   Deixler, Peter ^b   Havens, Ramon J ^a   Rodriguez, Angel ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

BiCMOS; Capacitor; Silicon; Varactors; Varicap

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SOLID STATE DEVICES; TEMPERATURE;

DOPING LEVEL; SOLID-STATE VARACTOR PERFORMANCE; VARICAP;

VARACTORS;

EID: 33745714969     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.875814     Document Type: Article

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