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Volumn 88, Issue 26, 2006, Pages

Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGE BROADENING; DIFFERENTIAL REFLECTIVITY; EXCITATION WAVELENGTHS; TRANSMISSION SPECTRA;

EID: 33745699634     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216108     Document Type: Article
Times cited : (13)

References (16)
  • 1
    • 0032516694 scopus 로고    scopus 로고
    • H. Ohno. Science 281, 951 (1998).
    • (1998) Science , vol.281 , pp. 951
    • Ohno, H.1
  • 16
    • 33745706415 scopus 로고    scopus 로고
    • note
    • g, unlike GaMnAs. The fact that induced absorption is more pronounced in LT GaAs than in GaMnAs suggests that there is larger number of trapping centers in LT GaAs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.