0.31k1 ArF lithography for 70nm DRAM

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue I, 2005, Pages 230-240

  Bok, Cheolkyu ^a   Lee, Ki Lyoung ^a   Park, Jun Taek ^a   Hwang, Young Sun ^a   Eom, Tae Seung ^a   Kim, Seo Min ^a   Lee, Geunsu ^a   Jung, Jae Chang ^a   Lim, Chang Moon ^a   Moon, Seung Chan ^a   Kim, Jin Woong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COSTS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; LIGHTING;

ARF LITHOGRAPHY; RESOLUTION ENHANCEMENT TECHNOLOGIES (RET); SINGLE LAYER RESIST (SLR) PROCESS;

LITHOGRAPHY;

EID: 24644445062     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599348     Document Type: Conference Paper

References (2)

1. Cheolkyu Bok et al., "0.33k1 ArF Lithography for 100nm DRAM", SPIE Vol.4691 (2002), p810.
2. Chang-Nam Ahn et al., "A Novel Approximate Model for Resist Process", SPIE Vol.3334(1998), p752.