Analysis of the three-dimensional nanoscale relationship of Ge quantum dots in a Si matrix using focused ion beam tomography

Materials Research Society Symposium Proceedings

Volumn 818, Issue , 2004, Pages 411-417

  Kubis, Alan J ^a   Vandervelde, Thomas E ^a   Bean, John C ^a   Dunn, Derren N ^b   Hull, Robert ^a  

^a University of Virginia   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GERMANIUM; ION BEAMS; NANOSTRUCTURED MATERIALS; PHASE SEPARATION; SCANNING TUNNELING MICROSCOPY; SILICON; SUPERLATTICES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING TECHNIQUE; FOCUSED ION BEAMS (FIB); SELF-ORGANIZATION MECHANISMS; SUPERLATTICE MATRIXES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 12744254309     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-818-m14.6.1     Document Type: Conference Paper

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