New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 1077-1084

  Peltinov, Ram ^a   Pan, Tony ^b   Dror, Ophir ^b  

^a Applied Materials Inc Israel   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Damascene; Depth monitoring; Mapping; Trench depth

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONNECTORS; ELECTRIC RESISTANCE; ETCHING; IMAGING TECHNIQUES; INTEGRATED CIRCUIT MANUFACTURE; SCANNING ELECTRON MICROSCOPY;

DEPTH MONITORING;

PHOTOLITHOGRAPHY;

EID: 0036029645     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473437     Document Type: Article

References (4)

1. B. Su, R. Oshana, M. Menaker, Y. Barak, Shape Control Using Side-wall Imaging, SPIE Microlithography Conference 2000, Proc. SPIE 3998, p. 232, 2000.
2. T. Marschner, G. Eytan, O. Dror, Determination of Best Focus and Exposure Dose using CD-SEM Side-wall Imaging SPIE 4344, 2001.
3. Shu-Chang Chen, Ting-Shu Lin, Fang-Cheng Chen, H.J. Tao, Itzik Zalzman, Ophir Dror, STI Etching Depth Monitor/Control by Sidewall Imaging from CD-SEM Semicon Taiwan 2001.
4. E. Solecky, C.N. Archie, T.S. Hayes, G.W. Banke, "Three-dimensional top-down metrology: a viable alternative to AFM and cross-section", SPIE 4344, 2001.