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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1196-1199
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Optical properties of microcrystalline 3C-SiC:H films measured by resonant photothermal bending spectroscopy
a
GIFU UNIVERSITY
(Japan)
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Author keywords
68.60.Wm; 68.88.Ln; 78.20.Ci; 78.40.Fy; Absorption; Microcrystallinity; Optical spectroscopy; Silicon
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Indexed keywords
ABSORPTION;
ABSORPTION SPECTROSCOPY;
CHEMICAL VAPOR DEPOSITION;
ESTIMATION;
HYDROGENATION;
LIGHT ABSORPTION;
SILICON;
68.60.WM;
68.88.LN;
78.40.FY;
MICROCRYSTALLINITY;
OPTICAL BANDGAP ENERGY;
OPTICAL SPECTROSCOPY;
SEMICONDUCTING FILMS;
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EID: 33745459205
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2006.01.074 Document Type: Article |
Times cited : (11)
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References (13)
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