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Volumn 457-460, Issue I, 2004, Pages 657-660
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Optical investigation of the built-in strain in 30-SiC epilayers
a,d
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Author keywords
30 SiC heteroepitaxy; Photoluminescence; Stress
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Indexed keywords
CARBONIZATION;
EPITAXIAL GROWTH;
IMAGING TECHNIQUES;
PHOTOLUMINESCENCE;
STRESSES;
THERMAL EXPANSION;
3C-SIC HETEROEPITAXY;
BAND-GAP EMISSIONS;
ENERGY GAPS;
RESIDUAL STRAIN;
SILICON CARBIDE;
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EID: 8744254630
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (16)
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