Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 415-420

  Kunii, Toshie ^a   Kitao, Junichi ^a   Mori, Kensuke ^a   Yoshida, Norimitsu ^a   Nonomura, Shuichi ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

Hydrogenated microcrystalline silicon films; Localized state; Optical absorption; Photothermal spectroscopy; Resonant photothermal bending spectroscopy

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; ENERGY GAP; HYDROGENATION; LIGHT ABSORPTION; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

RESONANT PHOTOTHERMAL BENDING SPECTROSCOPY;

THIN FILMS;

EID: 0036778405     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00119-8     Document Type: Article

References (5)

1. Phothermal bending spectroscopy: Bending effect of film/substrate by thermal expansion
2. Photoinduced effects on infrared and near infrared absorption of amorphous and microcrystalline Si measured by photothermal bending spectroscopy
3. On the photoionization of deep impurity centers in semiconductors