The effect of a-GaAs/a-Si double buffer layers on GaAs-on-Si as determined by transmission electron microscopy

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 852-856

  Uen, Wu Yih ^a   Li, Zhen Yu ^a   Lan, Shan Ming ^b   Yang, Tsun Neng ^b   Shin, Hwa Yuh ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; SUBSTRATES; THERMAL CYCLING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DOUBLE BUFFER LAYERS; EPITAXIAL LAYERS; THERMAL CYCLIC ANNEALING; THREADING DISLOCATIONS;

GALLIUM COMPOUNDS;

EID: 33745237197     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/004     Document Type: Article

References (12)

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