Direct measurement of the Hall effect in a free-electron-like surface state

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 23, 2006, Pages

  Hirahara, Toru ^a   Matsuda, Iwao ^a   Liu, Canhua ^a   Hobara, Rei ^a   Yoshimoto, Shinya ^a   Hasegawa, Shuji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745194823     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.235332     Document Type: Article

References (26)

1. E. H. Hall, Am. J. Math. AJMAAN 0002-9327 2, 287 (1879).
2. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118061 69, 363 (1996).
3. K. v. Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.45.494 45, 494 (1980).
4. D. C. Tsui, H. L. Stormer, and A. C. Gossard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.48.1559 48, 1559 (1982).
5. O. Pfennigstorf, A. Petkove, H. L. Guenter, and M. Henzler, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.045412 65, 045412 (2002).
6. N. G. Galkin, D. L. Goroshko, A. V. Konchenko, V. A. Ivanov, and A. S. Gouralnik, Surf. Rev. Lett. SRLEFH 0218-625X 6, 7 (1999).
7. I. Vilfan, M. Henzler, O. Pfennigstorf, and M. Henzler, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.241306 66, 241306 (R) (2002).
8. M. Jalochowski, M. Hoffmann, and E. Bauer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.76.4227 76, 4227 (1996).
9. I. Matsuda, T. Hirahara, M. Konishi, C. Liu, H. Morikawa, M. D'angelo, S. Hasegawa, T. Okuda, and T. Kinoshita, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.235315 71, 235315 (2005).
10. T. Hirahara, I. Matsuda, M. Ueno, and S. Hasegawa, Surf. Sci. SUSCAS 0039-6028 10.1016/j.susc.2004.06.157 563, 191 (2004):
11. T. Hirahara, I. Matsuda, and S. Hasegawa, e-J. Surf. Sci. Nanotechnol. SSNUA9 1348-0391 10.1380/ejssnt.2004.141 2, 141 (2004).
12. C. Liu, I. Matsuda, R. Hobara, and S. Hasegawa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.036803 96, 036803 (2006):
13. Y. Nakajima, G. Uchida, T. Nagao, and S. Hasegawa, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.14134 54, 14134 (1996).
14. J. N. Crain, K. N. Altmann, C. Bromberger, and F. J. Himpsel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.205302 66, 205302 (2002).
15. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College, New York, 1976), Chap.,.
16. S. Hasegawa, X. Tong, S. Takeda, N. Sato, and T. Nagao, Prog. Surf. Sci. PSSFBP 0079-6816 10.1016/S0079-6816(99)00008-8 60, 89 (1999).
17. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, New York, 1992).
18. S. Hasegawa and S. Ino, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.68.1192 68, 1192 (1992).
19. I. Matsuda, M. Ueno, T. Hirahara, R. Hobara, H. Morikawa, C. Liu, and S. Hasegawa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.236801 93, 236801 (2004).
20. X. Tong, S. Hasegawa, and S. Ino, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.1310 55, 1310 (1997).
21. C. Hamaguchi, Basic Semiconductor Physics (Springer-Verlag, Berlin, 2001).
22. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap..
23. C.-S. Jiang, X. Tong, S. Hasegawa, and S. Ino, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(96)01569-5 376, 69 (1997).
24. C. M. Hurd, The Hall Effect in Metals and Alloys (Plenum Press, New York, 1972), Chap., and references therein.
25. T. Kanagawa, R. Hobara, I. Matsuda, T. Tanikawa, A. Natori, and S. Hasegawa Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.036805 91, 036805 (2003).
26. T. Tanikawa, I. Matsuda, T. Kanagawa, and S. Hasegawa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.016801 93, 016801 (2004).