Comparison between multilayered InAs quantum dot lasers with different dot densities

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Shimizu, Hitoshi ^a   Saravanan, Shanmugam ^a   Yoshida, Junji ^a   Ibe, Sayoko ^b   Yokouchi, Noriyuki ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; OSCILLATIONS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

FULL WIDTH AT HALF MAXIMUM (FWHM); NONUNIFORMITY; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 33745188699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213520     Document Type: Article

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