Fabrication of GaN dot structures on Si substrates by droplet epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1700-1703

  Kondo, Toshiyuki ^a   Saitoh, Koji ^a   Yamamoto, Yo ^a   Maruyama, Takahiro ^a   Naritsuka, Shigeya ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOT DENSITY; DROPLET EPITAXY; ROOM TEMPERATURE; YELLOW LUMINESCENCE;

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745102787     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565212     Document Type: Article

References (12)

1. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, Phys. Rev. B 56, R7069 (1997).
2. C. Adelmann, N. Gogneau, E. Sarigiannidou, J. L. Rouviere, and B. Daudin, Appl. Phys. Lett. 81, 3064 (2002).
3. M. Miyamura, K. Tachibana, and Y. Arakawa, Appl. Phys. Lett. 80, 3937 (2002).
4. S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).
5. K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui, and Y. Aoyagi, Appl. Phys. Lett. 79, 2243 (2001).
6. C.-W. Hu, A. Bell, F. A. Ponce, D. J. Smith, and I. S. Tsong, Appl. Phys. Lett. 81, 3236 (2002).
7. C.-W. Hu, A. Bell, L. Shi, F. A. Ponce, D. J. Smith, and I. S. T. Tsong, Appl. Phys. Lett. 82, 2889 (2003).
8. C.-L. Wu, L.-J. Chou, and S. Gwo, Appl. Phys. Lett. 85, 2071 (2004).
9. T. Maruyama, K. Saitoh, T. Miyazaki, T. Kondo, and S. Naritsuka, Abstract of International Conference on Molecular Beam Epitaxy (MBE2004), TUP-30 (2004).
10. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Onneby, and S. E. Mohney, Appl. Phys. Lett. 70, 2156 (1997).
11. P. J. Kench, J. M. Shannon, G. Shao, P. Tsakiropoulos, and S. R. P. Silva, Nucl. Instrum. Methods Phys. Res. B 175-177, 678 (2001).
12. C. Adelmann, B. Daudin, R. A. Oliver, G. A. D. Briggs, and R. E. Rudd, Phys. Rev. B 70, 125427 (2004).