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Volumn 24, Issue 3, 2006, Pages 1607-1612
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Molecular beam epitaxy grown In1-xAlx SbInSb structures for infrared detectors
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Author keywords
[No Author keywords available]
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Indexed keywords
CONCENTRATION (PROCESS);
MOLECULAR BEAM EPITAXY;
PHOTODIODES;
SEMICONDUCTING INDIUM COMPOUNDS;
SILICON;
STRAIN;
SUBSTRATES;
AVERAGE DARK CURRENT;
FOCAL PLANE ARRAY (FPA) TECHNOLOGY;
MORPHOLOGICAL CROSSHATCH PATTERNS;
NON-UNIFORMITY CORRECTION (NUC).;
INFRARED DETECTORS;
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EID: 33744823542
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2190670 Document Type: Article |
Times cited : (10)
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References (13)
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