Molecular beam epitaxy grown 0.6 eV n/p/n InPAs/InGaAs/InAlAs double heterostructure thermophotovoltaic devices using carbon as the p -type dopant

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1626-1629

  Wernsman, Bernard ^a   Bird, Thomas ^b   Sheldon, Michael ^a,c   Link, Samuel ^a   Wehrer, Rebecca ^a  

^a BECHTEL BETTIS INC   (United States)

^b Veeco Compound Semiconductor Inc   (United States)

^c Lasertel Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT SUBSTITUTES; DOUBLE HETEROSTRUCTURE TPV DEVICES; ROOM TEMPERATURE; THERMOPHOTOVOLTAIC (TPV) DEVICES;

CARBON; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SAFETY FACTOR;

SEMICONDUCTOR DEVICES;

EID: 33744797107     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2192535     Document Type: Article

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