Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 1-6

  Han, Jae Chun ^b   Song, Jong In ^a,b   Park, Sung Woong ^c   Woo, Deokha ^d  

^a Kwangju Institute of Science and Technology ^*

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c NEOPTEK   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

Carbon tetrabromide; Carbon doping; Chemical beam epitaxy; InGaAs; InP InGaAs(C) HBT

Indexed keywords

CARBON; CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; HETEROJUNCTION BIPOLAR TRANSISTORS; HOLE MOBILITY; LATTICE CONSTANTS; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CARBON TETRABROMIDE; DOPING CONCENTRATION; DOPING SOURCE; EPITAXIAL LAYER STRUCTURES; FULL WIDTH HALF MAXIMUMS; GROWTH TEMPERATURE; HOLE CONCENTRATION; HYDROGEN PASSIVATION; LATTICE MATCH; POSTGROWTH ANNEALING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036247926     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974740     Document Type: Article

References (20)

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