0.74/0.55-eV GaxIn1-xAs/InAsyP1-y monolithic, tandem, MIM TPV converters: Design, growth, processing and performance

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 884-887

  Wehrer, R J ^a   Wanlass, M W ^b   Wernsman, B ^a   Carapella, J J ^b   Ahrenkiel, S P ^b   Wilt, D M ^c   Murray, C S ^d  

^a BECHTEL BETTIS INC   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

^d EMCORE Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

GALLIUM INDIUM ARSENIDE; INDIUM ARSENIC PHOSPHIDE; LATTICE MISMATCHED; POWER DENSITY; THERMOPHOTOVOLTAIC TANDEM CONVERTER;

ELECTRIC CONVERTERS;

EID: 0036948695     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Fahrenbruch, A. L., and Bube, R. H., "Concentrators, Concentrator Systems, and Photoelectrochemical Cells," in Fundamentals of Solar Cells, Academic Press, Inc., San Diego, 1983, pp. 520-526.
2. Wilt, D. M., et al., "Monolithically Interconnected InGaAs TPV Module Development," Proc. IEEE 25th PVSC, May 1996, p. 43.
3. Wilt, D. M., et al, "Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAS Monolithic Interconnected Modules," Proc. 3rd NREL TPV Conf., AIP 401, 1997, pp. 237-247.
4. Siergiej, R. R., et al., "High Efficiency, Large Area, InGaAs/InPAs Thermophotovoltaic Cells," 59th IEEE Device Research Conference, 2001, pp. 159-160.
5. Murray, C. S., et al., "Growth, Processing and Characterization of 0.55-eV n/p/n Monolithic Interconnected Modules," 28th IEEE PVSC, Anchorage, AK, September 15-22, 2000, pp. 1238-1241.
6. Wilt, D. M., et al., "0.55-eV n/p/n MIM TPV Cell Development," 28th IEEE PVSC, Anchorage, AK, September 15-22, 2000, pp. 1024-1027.
7. Wanlass, M. W., "Low Bandgap Double Heterostructure InAsP/GaInAs Photovoltaic Converters," U. S. Patent number 6,300,557 B1, issued 10/9/01.
8. 0.68 Thermophotovoltaic Converters and Monolithic Interconnected Modules," Proc. 4th NREL TPV Conf., AIP 460, 1998, pp. 132-139.
9. 1-x Alloys Used in Thermophotovoltaic Converters," Proc. 4th NREL TPV Conf., AIP 460, 1998, pp. 282-288.
10. Ahrenkiel, R. K., et al., Appl. Phys. Lett. 72, 3470 (1998).
11. U.S. Patent pending.
12. U. S. Patent pending.
13. Wanlass, M. W., "Electrical Isolation of Component Cells in Monolithically Interconnected Modules," U. S. Patent number 6,239,354, issued 5/29/01.
14. Wilt, D. M., et al., "Lattice-Mismatched InGaAs PV Devices for TPV Power Systems," Proc. 1st World Conf. On PV Energy Conversion, 1994, p. 1738.
15. Fatemi, N. S., et al., "Materials and Process Development for the Monolithic Interconnected Module (MIM) InGaAs/InP TPV Devices," Proc. 3rd NREL TPV Conf., AIP 401, 1997, pp. 249-262.
16. Sze, S. M., "p-n Junction," in Semiconductor Devices: Physics and Technology, AT&T Bell Laboratories, Murray Hill, NJ, 1985, pp. 100-107.