Monte Carlo simulations of electron transport in wurtzite phase GaN MESFET including trapping effect

Modern Physics Letters B

Volumn 20, Issue 13, 2006, Pages 787-794

  Arabshahi, H ^a  

^a HAKIM SABZEVARI UNIVERSITY   (Iran)

Author keywords

Buffer layer; Current collapse; Ensemble Monte Carlo; MESFET transistor; Steady state; Trap centers; Wurtzite structure

Indexed keywords

EID: 33744541861     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984906011037     Document Type: Article

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