Process analysis and optimization on PECVD amorphous silicon on glass substrate

Journal of Physics: Conference Series

Volumn 34, Issue 1, 2006, Pages 812-817

  Ong, Yan Ying ^a,b   Chen, Bang Tao ^b   Tay, Francis E H ^a,b   Iliescu, Ciprian ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

Author keywords

Amorphous silicon; Deposition rate; Low stress; PECVD

Indexed keywords

EID: 33744519554     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/134     Document Type: Article

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