Control of stress in highly doped polysilicon multi-layer diaphragm structure

Surface and Coatings Technology

Volumn 141, Issue 1, 2001, Pages 96-102

  Chen, Longqing ^a   Miao, Jianmin ^a   Guo, Lihui ^a   Lin, Rongming ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Crystallized degree; Multi layer diaphragm structure; Polysilicon thin film; Residual strees control

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIAPHRAGMS; RAMAN SCATTERING; SEMICONDUCTING FILMS; SUBSTRATES; TENSILE STRESS;

DEPOSITION TEMPERATURE;

POLYSILICON;

CONTROL;

EID: 0035806002     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01163-X     Document Type: Article

References (22)

1. Carbon doped polycrystalline silicon layers
2. The effect of temperature and pressure on residual stress in LPCVD polysilicon films
3. Stress and microstructure in phosphorus doped polycrystalline silicon