Profile angle control in SiO2 deep anisotropic dry etching for mems fabrication

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2004, Pages 669-672

  Pavius, M ^a   Hibert, C ^a   Flückiger, Ph ^a   Ph Renaud, ^a   Rolland, L ^b   Puech, M ^b  

^a EPFL   (Switzerland)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; MIXTURES;

ETCH RATE; GAS FLOW RATE; GAS RESIDENCE; SUBSTRATE BIAS VOLTAGE;

SILICA;

EID: 3042784597     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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