High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3328, Issue , 1998, Pages 93-101

  Pandhumsoporn, Tam ^a   Wang, Lei ^a   Feldbaum, Michael ^a   Gadgil, Prashant ^a   Puech, Michel ^b   Maquin, Philippe ^b  

^a USA   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Anisotropic; Micromachining; Plasma etching; Silicon etching

Indexed keywords

ANISOTROPY; ASPECT RATIO; COMPOSITE MICROMECHANICS; CONCRETE BRIDGES; CRYSTAL ORIENTATION; DRY ETCHING; ETCHING; FABRICATION; INTELLIGENT STRUCTURES; MACHINING; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; NONMETALS; PHOTORESISTS; PLASMA ETCHING; PLASMA SOURCES; PLASMAS; THICKNESS MEASUREMENT;

ALCATEL (CO); ANISOTROPIC; DEEP ETCHING; DENSITY PLASMA; ETCH PROCESSING; ETCHING BEHAVIOR; FABRICATION PROCESSES; HIGH ASPECT RATIO (HAR); IC PROCESSING; MEMS FABRICATION; SILICON CRYSTALS; SILICON ETCHING; SILICON MICRO-MACHINING; YAW RATE;

ANISOTROPIC ETCHING;

EID: 0004795146     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.320159     Document Type: Conference Paper

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