Dimensional effects on the drain current of N- and P-channel polycrystalline silicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3879-3882

  Shih, Po Sheng ^a   Zan, Hsiao Wen ^a   Chang, Ting Chang ^b,c   Huang, Tiao Yuan ^a,b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Dimensional effect; Drain current; Grain boundary trap density; Kink effect; Poly Si TFT

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; GEOMETRY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

DIMENSIONAL EFFECTS; DRAIN CURRENT; GRAIN BOUNDARY TRAP DENSITY; KINK EFFECT; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0034215511     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3879     Document Type: Article

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