Investigation of n-channel triple-gate metal-oxide-semiconductor field-effect transistors on (100) silicon on insulator substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3097-3100

  Endo, Kazuhiko ^a   Masahara, Meishoku ^a   Liu, Yongxun ^a   Matsukawa, Takashi ^a   Ishii, Kenichi ^a   Sugimata, Etsurou ^a   Takashima, Hidenori ^a   Yamauchi, Hiromi ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dopant profile; Ion implantation; Mobility; Sub threshold; Triple gate

Indexed keywords

ELECTRON MOBILITY; GATES (TRANSISTOR); ION IMPLANTATION; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

DOPANT PROFILE; MOBILITY; SUB-THRESHOLD; TRIPLE-GATE;

MOSFET DEVICES;

EID: 33646948796     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3097     Document Type: Article

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