Optical absorption spectra of hydrogenated microcrystalline silicon films by resonant photothermal bending spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3913-3921

  Kunii, Toshie ^a   Yoshida, Norimitsu ^a   Hori, Yasuro ^b   Nonomura, Shuichi ^a  

^a GIFU UNIVERSITY   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Grain boundary; Localized state; Microcrystalline silicon; Microcrystalline silicon carbide; Optical properties; Resonant photothermal bending spectroscopy

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; LIGHT ABSORPTION; OPTICAL PROPERTIES; OXIDATION; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

ABSORPTION COEFFICIENT; LOCALIZED STATE; MICROCRYSTALLINE SILICON; MICROCRYSTALLINE SILICON CARBIDE; PHOTOTHERMAL BENDING SPECTROSCOPY (PBS); VACUUM MEASUREMENT;

THIN FILMS;

EID: 33646934110     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3913     Document Type: Article

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