Analysis of origin of threshold voltage change induced by impurity in fully silicided NiSi/SiO2 gate stacks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2919-2924

  Manabe, Kenzo ^a   Takahashi, Kensuke ^a   Hase, Takashi ^a   Ikarashi, Nobuyuki ^a   Oshida, Makiko ^a   Tatsumi, Toru ^a   Watanabe, Hirohito ^a   Watanabe, Heiji ^b   Yasutake, Kiyoshi ^b  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Impurity; Metal gate; MOSFET; Nickel silicide; Threshold voltage

Indexed keywords

IMPURITIES; MOSFET DEVICES; NICKEL COMPOUNDS; SILICA; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL DIPOLE MOMENT; IMPURITY SEGREGATION; METAL GATE; NICKEL SILICIDE;

GATES (TRANSISTOR);

EID: 33646907668     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2919     Document Type: Article

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