The effect of deposition conditions on the radiation tolerance of BPSG films

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2565-2571

  Fuller, Robert ^a   Evans, Howard ^a   Gamlen, Carol ^a   Czagas, Bill ^a   Morrison, Michael ^b   Decrosta, David ^b   Lowry, Robert ^b   Lenahan, Patrick ^b   Frye, Christopher ^b  

^a INTERSIL CORPORATION   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOROPHOSPHATE GLASS; BOROSILICATE GLASS; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRON SPIN RESONANCE SPECTROSCOPY; HARDNESS; PLASMA APPLICATIONS; RADIATION EFFECTS; RADIATION HARDENING; STOICHIOMETRY; VOLTAGE MEASUREMENT;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (ATCVD); BOROPHOSPHOSILICATE GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); RADIATION TOLERANCE;

SEMICONDUCTING FILMS;

EID: 0030370708     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556837     Document Type: Article

References (7)

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6. J. F. Conley, Jr. and P. M. Lenahan, A Review of Electron Spin Resonance Spectroscopy of Defects in Thin Film Si02 on Silicon, in The Physics and Chemistry of SiU2 and the Si-Si(>2 Interface III, H. Z. Massoud, E. H. Poindexter, and C. R. Helms editors. The Elctrochemical Society, Pennington, NJ (1996) p214-249.
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