Demonstration and analysis of accumulation-mode double-gate metal-oxide-semiconductor field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3079-3083

  Masahara, Meishoku ^a   Endo, Kazuhiko ^a   Liu, Yongxun ^a   Matsukawa, Takashi ^a   O'Uchi, Shinichi ^a   Ishii, Kenichi ^a   Sugimata, Etsuro ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Accumulation mode; Channel body doping concentration; Channel thickness; Inversion mode; Short channel effects; Subthreshold slope; Threshold voltage; Vertical DG MOSFET

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; DOPING (ADDITIVES); GATES (TRANSISTOR); THRESHOLD VOLTAGE;

ACCUMULATION MODE; CHANNEL BODY DOPING CONCENTRATION; CHANNEL THICKNESS; INVERSION MODE; VERTICAL DG-MOSFET;

MOSFET DEVICES;

EID: 33646906858     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3079     Document Type: Article

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