Low-temperature photoluminescence spectra of layered semiconductor TlGaS2

Solid State Communications

Volumn 105, Issue 1, 1998, Pages 21-24

  Gasanly, N M ^a,b   Aydinli, A ^c   Bek A , ^c   Yilmaz, I ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BAKU STATE UNIVERSITY   (Azerbaijan)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

A. Semiconductors; D. Optical properties; E. Luminescence

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

EXCITATION LASER DENSITY; LAYERED SEMICONDUCTORS; RADIATIVE TRANSITIONS; RECOMBINATION; THALLIUM GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031631549     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10027-8     Document Type: Article

References (14)

1. Yee, K.A. and Albright, A., J. Am. Chem. Soc., 113, 1991, 6474.
2. Muller, D. and Hahn, H., Z. Anorg. Allg. Chem., 438, 1978, 258.
3. Bakhyshov, A.E., Lebedev, A.A., Khalafov, Z.D. and Yakobson, M.A., Sov. Phys. Semicond., 12, 1978, 320.
4. Abutalybov, G.I. and Salaev, E.Yu., Sov. Phys. Solid State, 28, 1986, 1231.
5. Abdullaeva, S.G., Mamedov, N.T., Mustafaev, F.A. and Salaev, E.Yu., Phys. Status Solidi (a), 82, 1984, K75.
6. Song, H.J., Yun, S.H. and Kim, W.T., Solid State Commun., 94, 1995, 225.
7. Hanias, M.P., Anagnostopoulos, A.N., Kambas, K. and Spyridelis, J., Mat. Res. Bull., 27, 1992, 25.
8. Kalkan, N., Kalomiros, J.A., Hanias, M. and Anagnostopoulos, A.N., Solid State Commun., 99, 1996, 375.
9. Shigetomi, S., Ikari, T. and Nakashima, H., Phys. Status Solidi (a), 156, 1996, K21.
10. Capozzi, V., Phys. Rev., B28, 1983, 4620.
11. Shigetomi, S., Ikari, T. and Nishimura, H., J. Appl. Phys., 69, 1991, 7936.
12. Schmidt, T., Lischka, K. and Zulehner, W., Phys. Rev., B45, 1992, 8989.
13. Gasanly, N.M. and Aydinli, A., Solid State Commun., 101, 1997, 797.
14. Pankove, J.I., Optical Processes in Semiconductors. Prentice-Hall, New Jersey, 1975.