Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

Solid State Communications

Volumn 108, Issue 8, 1998, Pages 525-530

  Gasanly, N M ^a,c   Serpenguzel A ^b   Gurlu O ^b   Aydinli, A ^b   Yilmaz, I ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

^c BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

A. semiconductors; D. optical properties; E. luminescence

Indexed keywords

EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; SINGLE CRYSTALS; THERMAL EFFECTS;

EMISSION BAND INTENSITY; EXCITATION INTENSITY;

THALLIUM COMPOUNDS;

EID: 0032179887     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00396-2     Document Type: Article

References (18)

1. Yee, K.A. and Albright, A., J. Am. Chem. Soc., 113, 1991, 6474 (and references therein).
2. Bidzinova, S.M., Guseinov, G.D., Guseinov, G.G. and Zargarova, M.I., Azerb. Khim. Zh., 2, 1973, 133 (in Russian).
3. Gasanly, N.M., D. Sci. Thesis, Baku State University, Azerbaijan, 1986 (in Russian).
4. Hanias, M.P., Anagnostopoulos, A.N., Kambas, K. and Spyridelis, J., Mat. Res. Bull., 27, 1992, 25.
5. Kalkan, N., Kalomiros, J.A., Hanias, M. and Anagnostopoulos, A.N., Solid State Commun., 99, 1996, 375.
6. Kalomiros, J.A., Kalkan, N., Hanias, M., Anagnostopoulos, A.N. and Kambas, K., Solid State Commun., 96, 1995, 601.
7. Gasanly, N.M., Goncharov, A.F., Melnik, N.N., Ragimov, A.S. and Tagirov, V.I., Phys. Status Solidi (b), 116, 1983, 427.
8. Gasanly, N.M., Aydinli, A., Bek, A. and Yilmaz, İ, Solid State Commun., 105, 1998, 21.
9. Kim, H.G., Park, K.M., Park, B.N., Lim, H.J., Min, S.K., Park, H.L. and Kim, W.T., Jap. J. Appl. Phys., 32, Suppl. No. 3, 1993, 476.
10. Willardson, R.K. and Beer, A.C., Semiconductors and Semimetals, Vol. 8, p. 374. Academic Press, New York, 1972.
11. Hwang, C.J., Phys. Rev., 180, 1969, 827.
12. Shigetomi, S., Ikari, T. and Nakashima, H., J. Appl. Phys., 74, 1993, 4125.
13. Pankove, J.I., Optical Processes in Semiconductors, p. 8 and 150. Prentice-Hall, Inc., New Jersey, 1975.
14. Capozzi, V., Phys. Rev., B28, 1983, 4620.
15. Yu, P.Y. and Cardona, M., Fundamentals of Semiconductors, p. 348. Springer, Berlin, 1995.
16. Zacks, E. and Halperin, A., Phys. Rev., B6, 1972, 3072.
17. Poure, A., Leyris, J.P. and Aicardi, J.P., J. Phys. C: Solid State Phys., 14, 1981, 521.
18. Schmidt, T., Lischka, K. and Zulehner, W., Phys. Rev., B45, 1992, 8989.