Donor-acceptor pair recombination in Tl2InGaS4 layered crystals

Journal of the Korean Physical Society

Volumn 47, Issue 2, 2005, Pages 267-271

  Goksen, K ^a   Gasanly, N M ^a   Ozkan, H ^a   Aydinli, A ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

Defect levels; Layered crystals; Photoluminescence; Semiconductors; Tl 2InGaS4

Indexed keywords

EID: 24644444252     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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