Behavior of elemental tellurium as surface generation-recombination centers in CdTeHgCdTe interface

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Lee, Min Yung ^a   Lee, Yong Soo ^a   Lee, Hee Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HYDRAZINE; INTERFACES (MATERIALS); REACTION KINETICS; TELLURIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL EQUATIONS; DISPERSIVE INTERFACE TRAP DENSITY (DIT); IDEALITY FACTORS; SURFACE GENERATION-RECOMBINATION;

INTERMETALLICS;

EID: 33646868639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203940     Document Type: Article

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