A new surface-flattening method using single-point diamond turning (SPDT) and its effects on LPE HgCdTe photodiodes

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages 40-43

  Lee, M Y ^a   Kim, Y H ^b   Kim, G H ^c   Yang, S C ^c   Lee, Y S ^a   Lee, H C ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b i3system Company   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIAMONDS; LIQUID PHASE EPITAXY; MERCURY COMPOUNDS; PHOTODIODES;

DEFECTIVE LAYERS; SINGLE-POINT DIAMOND TURNING (SPDT); SURFACE FLATNESS;

SURFACE PROPERTIES;

EID: 29144495949     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/007     Document Type: Article

References (10)

1. Radhakrishnan J K, Sitharaman S and Gupta S C 2003 Appl. Surf. Sci. 207 33
2. Pelliciari B 1988 J. Cryst. Growth 86 146
3. Parker S G, Weirauch D F and Chandra D 1988 J. Cryst. Growth 86 173
4. Bernardi S 1988 J. Cryst. Growth 87 365
5. Cheung C F and Lee W B 2001 Int. J. Mach. Tools Manuf. 41 851
6. Davis M, Devitt J, Greiner M, Rawe R and Timlin A 2004 Proc. SPIE 5563 pp 62-77 (Orlando: America/SPIE)
7. Ehmke J C 2002 US Patent 6,359,290 B1
8. Yang K D, Lee Y S and Lee H C 2005 Appl. Phys. Lett. 87 11905
9. Lee S H, Bae S H, Lee H C and Kim C K 1998 J. Electron. Mater. 27 684
10. Lee M Y, Lee Y S and Lee H C 2005 Japan J. Appl. Phys. 44 L 1252