Bake stability of CdTe and ZnS on HgCdTe: An X-ray photoelectron spectroscopy study

Journal of Electronic Materials

Volumn 32, Issue 8, 2003, Pages 899-905

  Jha, S K ^a   Srivastava, P ^a   Pal, R ^b   Anjali, ^b   Sehgal, H K ^a   Lee, Hee Chul ^c   Agnihotri, O P ^c   Gong, B B ^d  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Depth profiling; HgCdTe; Passivation; XPS

Indexed keywords

DIFFUSION IN SOLIDS; ENERGY GAP; INTERFACES (MATERIALS); NUMERICAL METHODS; OPTIMIZATION; SUBSTRATES; SURFACE TREATMENT; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

BAKE STABILITY; INFRARED DETECTION; MERCURY CADMIUM TELLURIDE; SURFACE PASSIVATION TECHNOLOGY;

MERCURY COMPOUNDS;

EID: 0042941967     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0207-y     Document Type: Article

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