Surface treatment effects on the electrical properties of the interfaces between ZnS and LPE-grown Hg0.7Cd0.3Te

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 684-688

  Lee, Seong Hoon ^a,b   Bae, Soo Ho ^a   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Bromine; Interface trap; LPE; Metal insulator semiconductor (MIS); Minority carrier response time; ZnS

Indexed keywords

EID: 3843091515     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0036-0     Document Type: Article

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