Series resistance in n-GaN/AlN/n-Si heterojunction structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4015-4017

  Kondo, Hiroyuki ^a   Koide, Norikatsu ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlN intermediate layer; GaN; MOVPE; Si substrate

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC RESISTANCE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SILICON;

ALN INTERMEDIATE LAYER; GROWTH CONDITIONS; MICROCRYSTALS; SI SUBSTRATE;

HETEROJUNCTIONS;

EID: 33646864775     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4015     Document Type: Article

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