Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Nagamine, M ^a   Nagase, T ^a   Nishiyama, K ^a   Yoshikawa, M ^a   Amano, M ^a   Asao, Y ^a   Ikegawa, S ^a   Yoda, H ^a   Honjo, H ^b   Mori, K ^b   Ishiwata, N ^b   Tahara, S ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNELING JUNCTION; NONMAGNETIC-NIFEZR ALLOY; POSTANNEALING;

ELECTRODES; FLUORESCENCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; NICKEL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

TUNNEL JUNCTIONS;

EID: 33646749670     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173637     Document Type: Article

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