Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Yoshikawa, M ^a   Kai, T ^a   Amano, M ^a   Kitagawa, E ^a   Nagase, T ^a   Nakayama, M ^a   Takahashi, S ^a   Ueda, T ^a   Kishi, T ^a   Tsuchida, K ^a   Ikegawa, S ^a   Asao, Y ^a   Yoda, H ^a   Fukuzumi, Y ^a   Nagahara, K ^b   Numata, H ^b   Hada, H ^b   Ishiwata, N ^b   Tahara, S ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING FIELDS; ION BEAM ETCHING; MAGNETORESISTIVE RANDOM ACCESS MEMORIES (MRAM); STRAY FIELDS;

ANTIFERROMAGNETISM; ATOMIC FORCE MICROSCOPY; MAGNETIC COUPLINGS; MAGNETIC FIELDS; MAGNETIC STORAGE; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MAGNETIC HEADS;

EID: 20944441036     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1859179     Document Type: Article

References (4)

1. S. Tehrani, IEEE Trans. Magn. 36, 2752 (2000).
2. M. Durlam, Symposium of VLSI Circuits Digest of Technical Papers, Honolulu, USA, 2002, p. 158.
3. U. K. Klostermann, R. Kinder, G. Bayreuther, M. Ruhrig, G. Rupp, and J. Wecker, J. Magn. Magn. Mater. 240, 304 (2002).
4. T. Kai, Tech. Dig. - Int. Electron Devices Meet. San Francisco, USA, 2004, p. 583.