A complex Fourier transformation study of the contactless electroreflectance of an undoped-n+ GaAs structure

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 786-789

  Jin, Peng ^a,b   Pan, S H ^a   Li, Y G ^a   Zhang, C Z ^a   Wang, Z G ^b  

^a NANKAI UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON TRAPS; MODULATION; PHOTOREFRACTIVE MATERIALS; SCREENING; SEMICONDUCTING GALLIUM COMPOUNDS;

CFT SPECTRA; COMPLEX FOURIER TRANSFORMATION (CFT); CONTACTLESS ELECTROREFLECTANCE (CER); PHOTOREFLECTANCE (PR);

FOURIER TRANSFORMS;

EID: 33646739725     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/013     Document Type: Article

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