Effect of InAs quantum dots on the Fermi level pinning of undoped-n+ type GaAs surface studied by contactless electroreflectance

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 4169-4172

  Jin, Peng ^a   Meng, X Q ^a   Zhang, Z Y ^a   Li, C M ^a   Xu, B ^a   Liu, F Q ^a   Wang, Z G ^a   Li, Y G ^b   Zhang, C Z ^b   Pan, S H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC FIELDS; FERMI LEVEL; MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; WETTING;

CONTACTLESS ELECTROREFLECTANCE (CER);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037392939     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556176     Document Type: Article

References (13)

1. See, for example, D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, UK, 1999), and references therein.
2. J. Z. Wang, Z. Yang, C. L. Yang, and Z. G. Wang, Appl. Phys. Lett. 77, 2837 (2000).
3. C. Walther, R. P. Blum, H. Niehus, W. T. Masselink, and A. Thamm, Phys. Rev. B 60, R13962 (1999).
4. C. Van Hoof, K. Deneffe, J. de Boeck, D. J. Arent, and G. Borghs, Appl. Phys. Lett. 54, 608 (1989).
5. H. Shen and M. Dutta, J. Appl. Phys. 78, 2151 (1995).
6. X. Yin and F. H. Pollak, Appl. Phys. Lett. 59, 2305 (1991).
7. F. H. Pollak, in Group III Nitride Semiconductor Compounds: Physics and Applications, edited by B. Gil (Oxford University Press, New York, 1998).
8. Q. Gong et al., J. Cryst. Growth 192, 376 (1998).
9. H. Yamamoto, T. Takahashi, and I. Kamiya, Appl. Phys. Lett. 77, 1994 (2000).
10. I. Tanaka, I. Kamiya, H. Sakaki, N. Qureshi, S. J. Allen, Jr., and P. M. Petroff, Appl. Phys. Lett. 74, 844 (1999).
11. J. Márquez, L. Geelhaar, and K. Jacobi, Appl. Phys. Lett. 78, 2309 (2001).
12. Y. Hasegawa, H. Kiyama, Q. K. Xue, and T. Sakurai, Appl. Phys. Lett. 72, 2265 (1998).
13. H. Lee, R. Lowe-Webb, W. Yang, and P. C. Sercel, Appl. Phys. Lett. 72, 812 (1998).