Charge trapping and built-in field studies in electroreflectance of a UN+ GaAs structure

Semiconductor Science and Technology

Volumn 11, Issue 4, 1996, Pages 521-524

  Mioc, S L ^a,c   Garland, J W ^a   Bennett, B R ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CONTINUOUS WAVE LASERS; ELECTRONS; FERMI LEVEL; HELIUM NEON LASERS; LIGHT MODULATION; LIGHTING; SEMICONDUCTING GALLIUM ARSENIDE;

AVERAGE LASER INTENSITY; CHARGE TRAPPING; PHOTOREFLECTANCE; SURFACE CHARGE EFFECT; VACUUM ELECTROREFLECTANCE;

ELECTROOPTICAL EFFECTS;

EID: 0030128913     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/4/010     Document Type: Article

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