SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 8, 2006, Pages

Temperature induced differences in the nanostructure of hot-wire deposited silicon-germanium alloys analyzed by anomalous small-angle x-ray scattering

(2) Goerigk, G a,c Williamson, D L b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b Department of Geology and Geological Engineering (United States)

c DESY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILAMENT TEMPERATURE; OPTOELECTRONIC PROPERTIES; SUBSTRATE TEMPERATURE;

GERMANIUM ALLOYS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; THERMAL EFFECTS; X RAY SCATTERING;

SILICON ALLOYS;

EID: 33646723859 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2187088 Document Type: Article

Times cited : (18)

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